Buscar en: Instituto de Microelectrónica de Barcelona (IMB-CNM)

Empiece una nueva busqueda
Add/Remove Filters (2 filters currently applied)

Resultados 1-10 de 11.
 |  Relevancia

 

Resultados por ítem:
DerechosPreviewFecha Public.TítuloAutor(es)Tipo
1openAccessBlistering of ALD.pdf.jpg28-sep-2015Blistering of ALD Al2O3 films in Al-Al2O3-Si structuresCampabadal, Francesca CSIC ORCID ; Acero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Duch, M.; Zabala, Miguel; González, M. B.póster de congreso
2openAccessAssessment of resistive switching characteristics on different.pdf.jpg11-jun-2018Assessment of resistive switching characteristics on different HfO2/Al2O3 dielectric stacksMaestro, Marcos; Poblador, Samuel CSIC ORCID ; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; González, M. B.; Campabadal, Francesca CSIC ORCID póster de congreso
3openAccessExploring the Multilevel Capabiblity of TIN.pdf.jpg27-jun-2016Exploring the Multilevel Capabiblity of TIN/Ti/HfO2/W RRAM Devices by Pulse ProgrammingGonzález, M. B.; Acero Leal, María Cruz CSIC ORCID ; Calvo Angos, José; Zabala, Miguel; Campabadal, Francesca CSIC ORCID comunicación de congreso
4closedAccessaccesoRestringido.pdf.jpg2009Patterning of ALD HfO2 layers on siliconAndreu, Robert; Sanchez, Javier; Sanchez, Ana; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID artículo
5openAccess11-feb-2015Investigation of the resistive switching behavior in Ni/HfO2-based RRAM devicesGonzález, M. B.; Acero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID comunicación de congreso
6closedAccessaccesoRestringido.pdf.jpg9-jun-2014Analysis of the temperature dependence of the switching variability in Ni/HfO2-based RRAM devicesGonzález, M. B.; Rafí, J. M. CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Campabadal, Francesca CSIC ORCID comunicación de congreso
7openAccess3-abr-2017Investigation of the multilevel capability of TiN/Ti/HfO2/W RRAM devices by pulse programmingGonzález, M. B.; Poblador, Samuel CSIC ORCID ; Mallol, M. M.; Calvo, J.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Campabadal, Francesca CSIC ORCID comunicación de congreso
8openAccessElectrical characterization and resistive switching behavior.pdf.jpg14-nov-2018Electrical characterization and resistive switching behavior of HfO2/Al2O3 multilayer stacksMaestro, Marcos; Poblador, Samuel CSIC ORCID ; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; González, M. B.; Campabadal, Francesca CSIC ORCID póster de congreso
9openAccessEffect of the blistering of ALD Al2O3 films on the silicon.pdf.jpg11-feb-2015Effect of the blistering of ALD Al2O3 films on the silicon surface in Al-Al2O3-Si structuresAcero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Duch, M.; Zabala, Miguel; González, M. B.; Campabadal, Francesca CSIC ORCID póster de congreso
10openAccessComparison between Al2O3 thin films grown by ALD.pdf.jpg8-feb-2011Comparison between Al2O3 thin films grown by ALD using H2O or O3 as oxidant sourceCampabadal, Francesca CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Rafí, J. M. CSIC ORCID comunicación de congreso