Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/257738
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Patterning of ALD HfO2 layers on silicon |
Autor: | Andreu, Robert; Sanchez, Javier; Sanchez, Ana; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID | Fecha de publicación: | 2009 | Editor: | Electrochemical Society | Citación: | ECS Transactions 25(4): 309-314 (2009) | Resumen: | A patterning technology for very thin layers of HfO2 layers grown by atomic layer deposition is proposed and evaluated in the case of patterning on silicon. This technology makes use of atomic layer deposited Al2O3 as a buffer layer, thus preventing silicon surface damage during HfO2 dry etching. The final surface roughness of silicon and of the patterned HfO2 layer as measured by AFM indicates that the proposed technology successfully leaves the silicon surface undamaged. The effects of photomasks overlapping have also been evaluated, which have lead to some design rules and buffer layer thickness requirements. | Descripción: | Trabajo presentado en 5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society, celebrado del 5 al 7 de octubre de 2009 | Versión del editor: | http://dx.doi.org/10.1149/1.3205065 | URI: | http://hdl.handle.net/10261/257738 | DOI: | 10.1149/1.3205065 | Identificadores: | doi: 10.1149/1.3205065 e-issn: 1938-6737 issn: 1938-5862 |
Aparece en las colecciones: | (IMB-CNM) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
accesoRestringido.pdf | 15,38 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
Page view(s)
49
checked on 24-abr-2024
Download(s)
11
checked on 24-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.