R5D_4687-1024x768_escapçada2.jpg picture
 
Firma en Digital.CSIC (*)
Rafí, J. M.
 
Otras firmas
Rafí, Joan Marc
 
Centro o Instituto
CSIC - Centro Nacional de Microelectrónica (CNM)
 
Departamento
Micro y Nanosistemas
 
Categoría Profesional
Científico Titular del CSIC
 
Especialización
Electrical characterization Electrical Reliability Radiation effects Advanced CMOS devices Semiconductor radiation detectors
 
Email
jm.rafi@csic.es
 
 
Perfil en Google Scholar
 
WoS ResearcherID - Publons
 
Scopus AuthorID
 
 
Otros - ResearchGate
 

Results 1-20 of 33 (Search time: 0.042 seconds).

RightsPreviewIssue DateTitleAuthor(s)Type
1openAccess10 um thin four quadrant diodes for beam alignment_irradiated_IWORID2016_JI_v30set2016.pdf.jpg2-Jan-201710 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: Electrical characterization and gamma irradiation effectsRafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Quirion, D.; Hidalgo, Salvador ; Godignon, P.; Matilla, O.; Juanhuix, J.; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, P.artículo
2openAccessManuscript_#SSE-D-11-00531_revised_version_with_all_changes_accepted_vfinal.pdf.jpg20132 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O <inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectricsRafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Takakura, K.; Tsunoda, I.; Zabala, Miguel; Beldarrain, O.; González, M. B.; García, H.; Castán, H.; Gómez, A.; Dueñas, S.artículo
3openAccessMR-D-13-00242R1-2_pagines_rellevants.pdf.jpg20132 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al<inf>2</inf>O<inf>3</inf> dielectrics of different thicknessRafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID artículo
4closedAccess28-Feb-2007The ATLAS semiconductor tracker end-cap moduleFleta, Celeste CSIC ORCID ; Martí García, Salvador; Lacasta Llácer, Carlos CSIC ORCID ; Fuster, Juan CSIC ORCID; Rafí, J. M. CSIC ORCID ; García García, Carmen CSIC ORCID; Stugu, Bjarne; Mellado, Bruce; Bernabeu Verdú, José CSIC ORCID; García Navarro, José Enrique CSIC ORCID; Ullán Comes, Miguel ; González González, Francisco; González Sevilla, Sergio CSIC; Modesto, Pablo; Campabadal, Francesca CSIC ORCID ; Llosá, Gabriela CSIC ORCID; Lozano Fantoba, Manuel CSIC ORCID ; Costa, María José CSIC ORCID; Escobar, Carlos CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Rodríguez Oliete, Rosario; Sánchez Martínez, Javier CSIC ORCID; Strachko, V.; Civera, José Vicente CSIC; Miñano, Mercedes CSIC ORCID; Oye, O. K.; Sospedra, Luis CSICartículo
5closedAccess24-May-2007Characterisation of p-type detectors for the future Super-LHCLacasta Llácer, Carlos CSIC ORCID ; Campabadal, Francesca CSIC ORCID ; Fleta, Celeste CSIC ORCID ; García García, Carmen CSIC ORCID; Lozano Fantoba, Manuel CSIC ORCID ; Martí García, Salvador; Miñano, Mercedes CSIC ORCID; Pellegrini, Giulio CSIC ORCID; Rafí, J. M. CSIC ORCID ; Ullán Comes, Miguel artículo
6closedAccess4-Feb-2007Characterization of edgeless detectors fabricated by dry etching processPellegrini, Giulio CSIC ORCID; Campabadal, Francesca CSIC ORCID ; Lozano Fantoba, Manuel CSIC ORCID ; Martí García, Salvador; Miñano, Mercedes CSIC ORCID; Rafí, J. M. CSIC ORCID ; Ullán Comes, Miguel artículo
7closedAccess30-Aug-2007Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHCMiñano, Mercedes CSIC ORCID; Campabadal, Francesca CSIC ORCID ; Escobar, Carlos CSIC ORCID ; García García, Carmen CSIC ORCID; González Sevilla, Sergio CSIC; Lacasta Llácer, Carlos CSIC ORCID ; Lozano Fantoba, Manuel CSIC ORCID ; Martí García, Salvador; Pellegrini, Giulio CSIC ORCID; Rafí, J. M. CSIC ORCID ; Ullán Comes, Miguel artículo
8openAccessPSD_2008_NIMA_manuscript_JMRafi_et_al_vfinal_revised.pdf.jpg1-Jun-2009Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiationRafí, J. M. CSIC ORCID ; Boulord, C.; Hayama, K.; Ohyama, H.; Campabadal, Francesca CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Lozano, M.; Simoen, E.; Claeys, C.artículo
9openAccessManuscript_#JES-10-0845R1_3rd_revision_vfinal.pdf.jpg2011Deposition temperature and thermal annealing effects on the electrical characteristics of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> films on siliconRafí, J. M. CSIC ORCID ; Zabala, Miguel; Beldarrain, O.; Campabadal, Francesca CSIC ORCID artículo
10openAccesspaper35_Esref02.pdf.jpg1-Jan-2002Electrical characteristics of high-energy proton irradiated, ultra-thin gate oxidesRafí, J. M. CSIC ORCID ; Vergnet, B.; Campabadal, Francesca CSIC ORCID ; Fleta, Celeste CSIC ORCID ; Fonseca, L.; Lozano, M.; Martinez, C.; Ullán, M.artículo
11openAccess1.4768167.pdf.jpg2013Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealingGarcía, H.; Castán, H.; Dueñas, S.; Bailón, L.; Campabadal, Francesca CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; González, M. B.; Rafí, J. M. CSIC ORCID artículo
12openAccessrafi_INFOS2007_full_paper_v2.pdf.jpg1-Sep-2007Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETsRafí, J. M. CSIC ORCID ; Simoen, E.; Mercha, A.; Hayama, K.; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Claeys, C.artículo
13openAccessTNS3029730_sense_marca_proofs_xo_encara_sense_correccions_finals.pdf.jpg8-Oct-2020Electron, Neutron, and Proton Irradiation Effects on SiC Radiation DetectorsRafí, Joan Marc ; Pellegrini, Giulio CSIC ORCID; Godignon, Philippe; Otero-Ugobono, Sofía; Rius, Gemma CSIC ORCID ; Tsunoda, Isao; Yoneoka, Masashi; Takakura, Kenichiro; Kramberger, Gregor; Moll, Michaelartículo
14openAccessJINST_051P_0817_revised.pdf.jpg1-Jan-2018Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: Electrical characterization and electron irradiation effectsRafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Godignon, P.; Quirion, D.; Hidalgo, Salvador ; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, P.artículo
15openAccess1-s2.0-S0038110115003482-Joan_Marc_Rafi_proton_irradiation_2015-2.pdf.jpg2016Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> dielectricRafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Fadeyev, V.; Galloway, Z.; Sadrozinski, H.F.-W.; Christophersen, M.; Phlips, B.F.; Lynn, D.; Kierstead, J.; Hoeferkamp, M.; Gorelov, I.; Palni, P.; Wang, R.; Seidel, S.artículo
16openAccessjmrafi_EUROSOI_2007_SSE_revised_vfinal.pdf.jpg2007Gate induced floating body effects in TiN/SiON and TiN/HfO<inf>2</inf> gate stack triple gate SOI nFinFETsRafí, J. M. CSIC ORCID ; Simoen, E.; Mercha, A.; Collaert, Nadine; Hayama, K.; Campabadal, Francesca CSIC ORCID ; Claeys, C.artículo
17openAccessdwshop99_p26.pdf.jpg1-Apr-2000Hot carrier reliability in deep-submicrometer LATID NMOSFETsRafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID artículo
18openAccesssse_dwsh.pdf.jpg1-Aug-2001Hot-carrier degradation in deep-submicrometer nMOSFETs: Lightly doped drain vs. large angle tilt implanted drainRafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID artículo
19openAccessdwshop99_p26.pdf.jpg1-Apr-2000Hot-carrier reliability in deep-submicrometer LATID NMOSFETsRafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID artículo
20openAccessP11_JMRafi.pdf.jpg1-Sep-2006Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETsRafí, J. M. CSIC ORCID ; Simoen, E.; Hayama, K.; Mercha, A.; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Claeys, C.artículo