English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/100747
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:

Title

Semiconductor-metal transition of the single-domain K/Si(100)-(2×1) interface by Fermi-surface determination

AuthorsMartín-Gago, José A. ; Asensio, Maria C.; Aebi, P.; Fasel, Román; Naumovic, D.; Osterwalder, J.; Refolio, M. C.; López Sancho, José María ; Rubio, J.
Issue Date1998
PublisherAmerican Physical Society
CitationPhysical Review B 57: 9201- 9207 (1998)
AbstractThe semiconductor-metal electronic transition of the K/Si(100)-(2×1) interface is studied by exploring the Fermi surface with photoemission spectroscopy. Once metallized at a critical coverage the surface remains metallic up to saturation. The experimentally determined Fermi surface consists of hole pockets centered around the Γ + ̄ points of the surface Brillouin zone. These results are fairly well reproduced by calculations based on a 2D Mott-Hubbard model. The metallization process is related to the overlap of Si-confined electron clouds surrounding the K atoms rather than to changes in the surface atomic structure. © 1998 The American Physical Society
URIhttp://hdl.handle.net/10261/100747
DOIhttp://dx.doi.org/10.1103/PhysRevB.57.9201
Identifiersdoi: 10.1103/PhysRevB.57.9201
issn: 0163-1829
Appears in Collections:(ICMM) Artículos
(CFMAC-IFF) Artículos
Files in This Item:
File Description SizeFormat 
JAMartinG.pdf1,33 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.