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Título: | Semiconductor-metal transition of the single-domain K/Si(100)-(2×1) interface by Fermi-surface determination |
Autor: | Martín-Gago, José A. CSIC ORCID ; Asensio, María C. CSIC ORCID; Aebi, P.; Fasel, Román; Naumović, D.; Osterwalder, J.; Refolio, M. C.; López Sancho, José María ; Rubio, J. | Fecha de publicación: | 1998 | Editor: | American Physical Society | Citación: | Physical Review B 57: 9201- 9207 (1998) | Resumen: | The semiconductor-metal electronic transition of the K/Si(100)-(2×1) interface is studied by exploring the Fermi surface with photoemission spectroscopy. Once metallized at a critical coverage the surface remains metallic up to saturation. The experimentally determined Fermi surface consists of hole pockets centered around the Γ + ̄ points of the surface Brillouin zone. These results are fairly well reproduced by calculations based on a 2D Mott-Hubbard model. The metallization process is related to the overlap of Si-confined electron clouds surrounding the K atoms rather than to changes in the surface atomic structure. © 1998 The American Physical Society | URI: | http://hdl.handle.net/10261/100747 | DOI: | 10.1103/PhysRevB.57.9201 | Identificadores: | doi: 10.1103/PhysRevB.57.9201 issn: 0163-1829 |
Aparece en las colecciones: | (ICMM) Artículos (CFMAC-IFF) Artículos |
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JAMartinG.pdf | 1,33 MB | Adobe PDF | Visualizar/Abrir |
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