2024-03-29T02:28:43Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1007472023-01-23T11:54:52Zcom_10261_89com_10261_3com_10261_14181com_10261_4col_10261_342col_10261_14182
http://hdl.handle.net/10261/100747
10.1103/PhysRevB.57.9201
247444
Semiconductor-metal transition of the single-domain K/Si(100)-(2×1) interface by Fermi-surface determination
American Physical Society
1998
artículo
Martín-Gago, José A.
rp13601
Asensio, María C.
Aebi, P.
Fasel, Román
Naumović, D.
Osterwalder, J.
Refolio, M. C.
López Sancho, José María
rp02181
Rubio, J.
1998
The semiconductor-metal electronic transition of the K/Si(100)-(2×1) interface is studied by exploring the Fermi surface with photoemission spectroscopy. Once metallized at a critical coverage the surface remains metallic up to saturation. The experimentally determined Fermi surface consists of hole pockets centered around the Γ + ̄ points of the surface Brillouin zone. These results are fairly well reproduced by calculations based on a 2D Mott-Hubbard model. The metallization process is related to the overlap of Si-confined electron clouds surrounding the K atoms rather than to changes in the surface atomic structure. © 1998 The American Physical Society
Physical Review B
1998
57
9201
9207