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Título: | Thin film bulk acoustic wave resonator and method for performing heterogeneous integration of the same with complementary -metal-oxide- semiconductor integrated circuit |
Autor: | Campanella Pineda, Humberto; Esteve i Tintó, Jaume; Cabruja Casas, Enric CSIC ORCID ; Montserrat Martí, Josep CSIC ORCID ; Terés, Lluís; Carmona Flores, Manuel | Fecha de publicación: | 28-ago-2008 | Citación: | WO 2008101646 (A1) | Resumen: | The invention relates to a method of performing heterogeneous integration of thin-film bulk acoustic wave resonator, FBAR, with complementary-metal-oxide-semiconductor integrated-circuit, CMOS, technologies. According to the invention, the method comprising the following steps, namely: i) forming a first device wafer including said FBAR, a sacrificial layer and substrate, with said FBAR devices defined on a first face; ii) forming a second device wafer including circuit elements fabricated on a CMOS technology, with CMOS integrated-circuits defined on a first face; iii) wafer-level-transferring and integration of the first device wafer including FBAR, a sacrificial layer and substrate, into the second device wafer including circuit elements fabricated on a CMOS substrate; iv) wafer-level-releasing of FBAR devices from their supporting substrate to provide mechanical isolation of FBAR devices. The invention further comprises a heterogeneous-technology semiconductor assembly, radio-frequency system and a sensing system. | Descripción: | Fecha de solicitud: 28-08-2008.- Titular: Consejo Superior de Investigaciones Científicas (CSIC) | URI: | http://hdl.handle.net/10261/27574 |
Aparece en las colecciones: | (IMB-CNM) Patentes |
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WO2008101646A1.pdf | 1,26 MB | Adobe PDF | Visualizar/Abrir |
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