2024-03-28T16:54:02Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/275742022-12-23T12:33:20Zcom_10261_28com_10261_4col_10261_1289
Campanella Pineda, Humberto
Esteve i Tintó, Jaume
Cabruja Casas, Enric
Montserrat, J.
Terés, Lluís
Carmona Flores, Manuel
2010-09-13T07:16:23Z
2010-09-13T07:16:23Z
2008-08-28
WO 2008101646 (A1)
http://hdl.handle.net/10261/27574
The invention relates to a method of performing heterogeneous integration of thin-film bulk acoustic wave resonator, FBAR, with complementary-metal-oxide-semiconductor integrated-circuit, CMOS, technologies. According to the invention, the method comprising the following steps, namely: i) forming a first device wafer including said FBAR, a sacrificial layer and substrate, with said FBAR devices defined on a first face; ii) forming a second device wafer including circuit elements fabricated on a CMOS technology, with CMOS integrated-circuits defined on a first face; iii) wafer-level-transferring and integration of the first device wafer including FBAR, a sacrificial layer and substrate, into the second device wafer including circuit elements fabricated on a CMOS substrate; iv) wafer-level-releasing of FBAR devices from their supporting substrate to provide mechanical isolation of FBAR devices. The invention further comprises a heterogeneous-technology semiconductor assembly, radio-frequency system and a sensing system.
eng
openAccess
Thin film bulk acoustic wave resonator and method for performing heterogeneous integration of the same with complementary -metal-oxide- semiconductor integrated circuit
patente