Thin film bulk acoustic wave resonator and method for performing heterogeneous integration of the same with complementary -metal-oxide- semiconductor integrated circuit

Abstract

The invention relates to a method of performing heterogeneous integration of thin-film bulk acoustic wave resonator, FBAR, with complementary-metal-oxide-semiconductor integrated-circuit, CMOS, technologies. According to the invention, the method comprising the following steps, namely: i) forming a first device wafer including said FBAR, a sacrificial layer and substrate, with said FBAR devices defined on a first face; ii) forming a second device wafer including circuit elements fabricated on a CMOS technology, with CMOS integrated-circuits defined on a first face; iii) wafer-level-transferring and integration of the first device wafer including FBAR, a sacrificial layer and substrate, into the second device wafer including circuit elements fabricated on a CMOS substrate; iv) wafer-level-releasing of FBAR devices from their supporting substrate to provide mechanical isolation of FBAR devices. The invention further comprises a heterogeneous-technology semiconductor assembly, radio-frequency system and a sensing system.