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Título: | Giant magnetoresistance near the magnetostructural transition in Gd5(Si1.8Ge2.2) |
Autor: | Morellón, Luis CSIC ORCID; Stankiewicz, Jolanta CSIC ORCID ; García-Landa, B.; Algarabel, Pedro A. CSIC ORCID; Ibarra, M. Ricardo CSIC ORCID | Fecha de publicación: | 1998 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 73(23): 3462-3464 (1998) | Resumen: | Zero-field electrical resistivity over the temperature range of 4–300 K and magnetoresistance in magnetic fields of up to 12 T have been measured in Gd5(Si1.8Ge2.2). This system undergoes a first-order magnetostructural transition at 𝑇𝐶≅240 K, from a high-temperature paramagnetic to a low-temperature ferromagnetic phase, accompanied by a large drop in the resistivity. The application of an external magnetic field above 𝑇𝐶 can induce this transition, and a giant negative magnetoresistance effect (Δρ/ρ≅−20%) is observed associated with this first-order field-induced transition. | Versión del editor: | https://doi.org/10.1063/1.122797 | URI: | http://hdl.handle.net/10261/256502 | DOI: | 10.1063/1.122797 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (ICMA) Artículos |
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giantransi.pdf | 381,51 kB | Adobe PDF | Visualizar/Abrir |
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