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Navegación por Autor Yoneoka, M.
Mostrando resultados 1 a 4 de 4
| Derechos | Preview | Fecha Public. | Título | Autor(es) | Tipo |
| openAccess |  | 2013 | 2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al<inf>2</inf>O<inf>3</inf> dielectrics of different thickness | Rafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 1-ene-2018 | Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: Electrical characterization and electron irradiation effects | Rafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Godignon, P.; Quirion, David; Hidalgo, Salvador ; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, Pablo | artículo |
| openAccess |  | 2013 | Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O<inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectrics | Rafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 1-nov-2023 | Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects | Rafí, J. M. CSIC ORCID ; Quirion, D.; Duch, M.; Lopez Paz, I.; Dauderys, V.; Claus, T.; Moffat, N.; Molas, B.; Tsunoda, I.; Yoneoka, M.; Takakura, K.; Kramberger, G.; Moll, M.; Pellegrini, G. | artículo |
