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Título: | Enhanced electroresistance endurance of capped Hf0.5Zr0.5O2 ultrathin epitaxial tunnel barriers |
Autor: | Long, Xiao; Tan, Huan; Estandía, Saúl; Gázquez, Jaume CSIC ORCID; Sánchez Barrera, Florencio CSIC ORCID; Fina, Ignasi CSIC ORCID CVN ; Fontcuberta, Josep CSIC ORCID | Palabras clave: | Thin films Electron energy loss spectroscopy Charge transport Electronic configuration |
Fecha de publicación: | 23-mar-2022 | Editor: | American Institute of Physics | Citación: | APL Materials 10(3): 031114 (2022) | Resumen: | Electroresistance in ultrathin Hf0.5Zr0.5O2 (HZO) films is pivotal toward the implementation of hafnia-based ferroelectrics in electronics. Here, we show that the electroresistance yield and endurance of large capacitors (∼314 μm2) of epitaxial HZO films only 2.2 nm thick grown on SrTiO3 or GdScO3 can be improved using 1 nm SrTiO3 capping layers. It is argued that the main role of the capping layer is to minimize charge transport along grain boundaries, and, thus, a similar strategy can be explored in polycrystalline films. | Versión del editor: | http://dx.doi.org/10.1063/5.0076865 | URI: | http://hdl.handle.net/10261/269514 | DOI: | 10.1063/5.0076865 | E-ISSN: | 2166-532X |
Aparece en las colecciones: | (ICMAB) Artículos |
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Long_APLMat_2022_editorial.pdf | 6,27 MB | Adobe PDF | Visualizar/Abrir |
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