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Título:	Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
Autor:	Gomis-Bresco, J. CSIC ORCID; Muñoz-Matutano, G.; Martínez Pastor, Juan Pascual CSIC ORCID; Alén, Benito CSIC ORCID
Fecha de publicación:	9-feb-2011
Editor:	Institute of Physics Publishing
Citación:	New Journal of Physics 13: 023022 (2011)
Resumen:	We model the time-resolved and time-integrated photoluminescence of a single InAs/GaAs quantum dot (QD) using a random population description. We reproduce the joint power dependence of the single QD exciton complexes(neutral exciton, neutral biexciton and charged trions). We use the model to investigate the selective optical pumping phenomenon, a predominance of the negative trion observed when the optical excitation is resonant to a nonintentional impurity level. Our experiments and simulations determine that the negative charge confined in the QD after exciting resonance to the impurity level escapes in 10 ns.
Descripción:	18 páginas, 3 tablas, 9 figuras.-- et al.
Versión del editor:	http://dx.doi.org/10.1088/1367-2630/13/2/023022
URI:	http://hdl.handle.net/10261/35948
DOI:	10.1088/1367-2630/13/2/023022
ISSN:	1367-2630
Aparece en las colecciones:	(IMN-CNM) Artículos (CIN2) Artículos

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Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping