Technology of metal oxide thin film deposition with interruptions

Abstract

The idea to obtain metal-oxide films with small grain size is to use a special regime of thin film deposition by r.f. sputtering of pure metal or metal oxide targets. This regime includes the deposition of thin films with one or several interruptions during the deposition process. WO3 films were r.f. sputtered onto pure and oxidized silicon wafers. Four types of films were prepared, i.e. using continual deposition, one, two and three interrupted depositions with an actual deposition time of 40 min. The interruption time changed from 0.5 min to 5.0 min for the different samples. It was found that the total thickness of WO3 films decreased with the increase of the number of interruptions and the increase in interruption time. Phase composition and features of surface morphology of the films deposited and annealed in the temperature range from room temperature to 900 °C have been investigated by XRD and AFM, respectively. It is shown that grain size in the metal oxide films decreased essentially with the increase of the number of interruption during the deposition process. © 2007 Elsevier B.V. All rights reserved.