Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk, Daria V.; Martí-Sànchez, Sara; Kang, Jung-Hyun; Tanta, Rawa; Rajpalke, Mohana; Stankevič, Tomaš; Wulff, Anna Christensen; Spadaro, Maria Chiara; Bergamaschini, Roberto; Maka, Nikhil N.; Petersen, Christian Emanuel N.; Carrad, Damon J.; Jespersen, Thomas Sand; Arbiol, Jordi; Krogstrup, Peter

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Título:	Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
Autor:	Beznasyuk, Daria V.; Martí-Sànchez, Sara CSIC ORCID; Kang, Jung-Hyun; Tanta, Rawa; Rajpalke, Mohana; Stankevič, Tomaš; Wulff, Anna Christensen; Spadaro, Maria Chiara CSIC ORCID; Bergamaschini, Roberto; Maka, Nikhil N.; Petersen, Christian Emanuel N.; Carrad, Damon J.; Jespersen, Thomas Sand; Arbiol, Jordi CSIC ORCID CVN; Krogstrup, Peter
Fecha de publicación:	16-mar-2022
Editor:	American Physical Society
Citación:	Beznasyuk, Daria V.; Martí-Sànchez, Sara; Kang, Jung-Hyun; Tanta, Rawa; Rajpalke, Mohana; Stankevič, T.; Wulff, Anna Christensen; Spadaro, Maria Chiara; Bergamaschini, Roberto; Maka, Nikhil N.; Petersen, Christian Emanuel N.; Carrad, Damon J.; Jespersen, Thomas Sand; Arbiol, Jordi; Krogstrup, Peter; 2022; Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires [Dataset]; American Physical Society. http://doi.org/10.1103/PhysRevMaterials.6.034602
Descripción:	20 pages. -- PDF file includes S1. Substrate fabrication and growth details; S2. Degradation of surface topography after thermal oxide removal prior nanowire growth; S3. Faceting of GaAs(Sb) vs GaAs nanowires; S4. The role of InGaAs growth temperature; S5. The role of InAs growth temperature; S6. InAs/InGaAs field effect mobility measurements: influence of the InGaAs buffer growth temperature; S7. InAs/InGaAs band structure simulations; S8. Transport measurements of InGaAs/GaAs(Sb) SAG nanowires without the InAs channel; S9. InAs/InGaAs field effect mobility measurements: influence of the InAs growth temperature, figures and tables.
Versión del editor:	http://doi.org/10.1103/PhysRevMaterials.6.034602
URI:	http://hdl.handle.net/10261/329972
DOI:	10.1103/PhysRevMaterials.6.034602
Referencias:	Beznasyuk, Daria V.; Martí-Sànchez, Sara; Kang, Jung-Hyun; Tanta, Rawa; Rajpalke, Mohana; Stankevič, T.; Wulff, Anna Christensen; Spadaro, Maria Chiara; Bergamaschini, Roberto; Maka, Nikhil N.; Petersen, Christian Emanuel N.; Carrad, Damon J.; Jespersen, Thomas Sand; Arbiol, Jordi; Krogstrup, Peter. Doubling the mobility of InAs/InGaAs selective area grown nanowires. http://doi.org/10.1103/PhysRevMaterials.6.034602
Aparece en las colecciones:	(CIN2) Conjuntos de datos