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| Título: | Hall effect in Gd5(Si1.8Ge2.2) |
Autor: | Stankiewicz, Jolanta CSIC ORCID ; Morellón, Luis CSIC ORCID; Algarabel, Pedro A. CSIC ORCID; Ibarra, M. Ricardo CSIC ORCID | Fecha de publicación: | 2000 | Editor: | American Physical Society | Citación: | Physical Review B 61(19): 12651-12653 (2000) | Resumen: | We have measured the Hall effect of polycrystalline Gd5(Si1.8Ge2.2) in the temperature range 4–360 K and in magnetic fields of up to 12 T. The Hall resistivity follows the magnetization of the material in the range studied. The anomalous Hall coefficient increases with increasing temperature and shows a sharp dip at the magnetostructural transition. Away from the dip, the Hall coefficient scales roughly with the square of the total resistivity, as expected if side-jump scattering dominates. | URI: | http://hdl.handle.net/10261/256522 | ISSN: | 0163-1829 |
| Aparece en las colecciones: | (ICMA) Artículos |
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| hallGe.pdf | 161,78 kB | Adobe PDF |  Visualizar/Abrir |
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