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dc.contributor.authorFerreyra, C.es_ES
dc.contributor.authorSánchez, M. J.es_ES
dc.contributor.authorAguirre, Myriam H.es_ES
dc.contributor.authorAcha, C.es_ES
dc.contributor.authorBengió, S.es_ES
dc.contributor.authorLecourt, J.es_ES
dc.contributor.authorLüders, U.es_ES
dc.contributor.authorRubi, D.es_ES
dc.date.accessioned2020-09-04T08:07:26Z-
dc.date.available2020-09-04T08:07:26Z-
dc.date.issued2020-
dc.identifier.citationNanotechnology 31: 155204 (2020)es_ES
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10261/219102-
dc.description.abstractThe development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON–OFF states. In the present work we demonstrate for Ta2O5-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta2O5−x layer: a central one and two quasi-symmetric interfaces with reduced TaO2−h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide—Ta-oxide—and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple—analogic—intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.es_ES
dc.description.sponsorshipWe acknowledge support from INN-CNEA, UNCuyo (06/C455), ANPCyT (PICT2014-1382, PICT2016-0867, PICT2017-1836, PICT 2017-0984), CONICET (PIP 11220150100653CO) and Univ. Buenos Aires (UBACyT 20020170100284BA). MA also acknowledges financial support of H2020-MSCA-RISE2016 SPICOLOST Grant No. 734187 to perform TEM studies at LMA-INA, University of Zaragoza. SB thanks technical support from N Cortes.es_ES
dc.language.isoenges_ES
dc.publisherIOP Publishinges_ES
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/734187es_ES
dc.rightsclosedAccesses_ES
dc.titleSelective activation of memristive interfaces in TaO x -based devices by controlling oxygen vacancies dynamics at the nanoscalees_ES
dc.typeartículoes_ES
dc.identifier.doi10.1088/1361-6528/ab6476-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttps://doi.org/10.1088/1361-6528/ab6476es_ES
dc.identifier.e-issn1361-6528-
dc.contributor.funderAgencia Nacional de Promoción Científica y Tecnológica (Argentina)es_ES
dc.contributor.funderConsejo Nacional de Investigaciones Científicas y Técnicas (Argentina)es_ES
dc.contributor.funderEuropean Commissiones_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003074es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002923es_ES
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