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Título: | Point defects in hexagonal BN, BC3 and BCxN compounds studied by x-ray absorption near-edge structure |
Autor: | Caretti, Ignacio CSIC ORCID; Jiménez Guerrero, Ignacio CSIC ORCID | Fecha de publicación: | 2011 | Editor: | American Institute of Physics | Citación: | Journal of Applied Physics 110: 023511 (2011) | Resumen: | The generation of point defects in highly oriented pyrolytic boron nitride (HOPBN) after Ar+ ion bombardment in ultrahigh vacuum and subsequent exposure to air was studied by angle-resolved x-ray absorption near edge structure (XANES). The pristine HOPBN showed well-oriented boron nitride (BN) basal planes parallel to the surface, with a negligible amount of defects. Amorphization of the BN structure took place after Ar+ sputtering, as indicated by the broadening of the XANES spectra and significant decrease of the characteristic π* states. Following air exposure, the XANES analysis revealed a spontaneous reorganization of the sample structure. The appearance of four new π* B1s excitonic peaks indicates an oxygen decoration process of the nitrogen vacancies created by ion bombardment. A core-level shift model is presented to support this statement. This model is successfully extended to the case of oxygen substitutional defects in hexagonal BC3 and BCxN (0 < x < 4) materials, which can be applied to any B-based sp2-bonded honeycomb structure. © 2011 American Institute of Physics. | Versión del editor: | http://dx.doi.org/10.1063/1.3602996 | URI: | http://hdl.handle.net/10261/93676 | DOI: | 10.1063/1.3602996 | Identificadores: | doi: 10.1063/1.3602996 issn: 0021-8979 e-issn: 1089-7550 |
Aparece en las colecciones: | (ICMM) Artículos |
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Point defects in hexagonal.pdf | 975,8 kB | Adobe PDF | Visualizar/Abrir |
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