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Internal infrared laser deflection system: a tool for power device characterization

AuthorsPerpiñà, X.; Jordà, Xavier; Mestres, Narcís ; Vellvehi Hernández, Miquel; Godignon, Philippe; Millán, José; Kiedrowski, H. von
KeywordsPower semiconductor devices
Internal device temperature
Free-carrier concentration
Laser deflection sensing
Issue Date2004
PublisherInstitute of Physics Publishing
CitationMeasurement Science and Technology 15(5): 1011-1018 (2004)
AbstractIn this paper, a set-up based on the internal IR-laser deflection technique is described. This technique allows measurement of the temperature gradient and free-carrier concentration inside power semiconductor devices with high spatial (35 µm) and time (less than 1 µs) resolution. The internal IR-laser deflection technique consists in the measurement of deflection and absorption of an IR-laser beam passing through a biased power device. After describing the operational principle and the experimental set-up, the postprocessing methodology followed to extract the temperature gradient and free-carrier concentration is detailed. In order to show the set-up functionality, the drift region of a 600 V PT-IGBT device has been studied. These measurements are very helpful for performing reliability or thermal management studies on power semiconductor devices.
Description8 páginas, 11 figuras, 1 tabla.
Publisher version (URL)http://dx.doi.org/10.1088/0957-0233/15/5/034
Appears in Collections:(ICMAB) Artículos
(IMB-CNM) Artículos
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