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| Título: | Initial stages of self-assembled InAs/InP(0 0 1) quantum wire formation |
Autor: | Fuster, David CSIC ORCID ; Alén, Benito CSIC ORCID; González Sotos, Luisa CSIC ORCID ; González Díez, Yolanda CSIC ORCID; Martínez Pastor, Juan Pascual CSIC ORCID | Palabras clave: | A1. Nanostructures A1. Nucleation A3. Molecular beam epitaxy B2. Semiconducting indium phosphide |
Fecha de publicación: | abr-2007 | Editor: | Elsevier | Citación: | Journal of Crystal Growth 301-302: 705-708 (2007) | Resumen: | In this work we explore the first stages of quantum wires (QWRs) formation studying the evolution of the growth front for InAs coverage below the critical thickness, θc, determined by reflection high-energy electron diffraction. Our results show that at a certain InAs coverage θ(InAs)<θc, the elastic relaxation process starts by spontaneous formation of isolated QWRs that evolves towards QWRs covering the whole surface with increasing InAs thickness. These results allow for a better understanding of the self-assembling process of QWRs in the InAs/InP system and for the first time enable the study of the novel properties of single self-assembled QWR. | Descripción: | 4 páginas, 2 figuras.-- PACS codes: 78.67.Lt; 68.65.La; 68.37.Ps.-- Comunicación oral presentada a la 14ª International Conference on Molecular Beam Epitaxy - MBE XIV celebrada en Tokio (Japón) del 3 al 8 de Septiembre de 2006. | Versión del editor: | http://dx.doi.org/10.1016/j.jcrysgro.2006.11.168 | URI: | http://hdl.handle.net/10261/33732 | DOI: | 10.1016/j.jcrysgro.2006.11.168 | ISSN: | 0022-0248 |
| Aparece en las colecciones: | (IMN-CNM) Artículos |
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| jcg_301-302_705_2007.pdf | 104,58 kB | Adobe PDF |  Visualizar/Abrir |
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