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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Fuster, David | - |
dc.contributor.author | Alén, Benito | - |
dc.contributor.author | González Sotos, Luisa | - |
dc.contributor.author | González Díez, Yolanda | - |
dc.contributor.author | Martínez Pastor, Juan Pascual | - |
dc.date.accessioned | 2011-03-24T09:07:09Z | - |
dc.date.available | 2011-03-24T09:07:09Z | - |
dc.date.issued | 2007-04 | - |
dc.identifier.citation | Journal of Crystal Growth 301-302: 705-708 (2007) | es_ES |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10261/33732 | - |
dc.description | 4 páginas, 2 figuras.-- PACS codes: 78.67.Lt; 68.65.La; 68.37.Ps.-- Comunicación oral presentada a la 14ª International Conference on Molecular Beam Epitaxy - MBE XIV celebrada en Tokio (Japón) del 3 al 8 de Septiembre de 2006. | es_ES |
dc.description.abstract | In this work we explore the first stages of quantum wires (QWRs) formation studying the evolution of the growth front for InAs coverage below the critical thickness, θc, determined by reflection high-energy electron diffraction. Our results show that at a certain InAs coverage θ(InAs)<θc, the elastic relaxation process starts by spontaneous formation of isolated QWRs that evolves towards QWRs covering the whole surface with increasing InAs thickness. These results allow for a better understanding of the self-assembling process of QWRs in the InAs/InP system and for the first time enable the study of the novel properties of single self-assembled QWR. | es_ES |
dc.description.sponsorship | The authors gratefully acknowledge the financial support by the Spanish MEC and CAM through project Nos. TEC-2005-05781-C03-01, NAN2004-09109-C04-01 and S- 505/ESP/000200, and by the European Commission through SANDIE Network of Excellence (No. NMP4- CT-2004-500101). | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Elsevier | es_ES |
dc.rights | openAccess | es_ES |
dc.subject | A1. Nanostructures | es_ES |
dc.subject | A1. Nucleation | es_ES |
dc.subject | A3. Molecular beam epitaxy | es_ES |
dc.subject | B2. Semiconducting indium phosphide | es_ES |
dc.title | Initial stages of self-assembled InAs/InP(0 0 1) quantum wire formation | es_ES |
dc.type | comunicación de congreso | es_ES |
dc.identifier.doi | 10.1016/j.jcrysgro.2006.11.168 | - |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1016/j.jcrysgro.2006.11.168 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_5794 | es_ES |
item.openairetype | comunicación de congreso | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
item.fulltext | With Fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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jcg_301-302_705_2007.pdf | 104,58 kB | Adobe PDF | Visualizar/Abrir |
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