English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/24993
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy

AuthorsGranados, Daniel ; García Martínez, Jorge Manuel
KeywordsIndium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Semiconductor growth
Molecular beam epitaxial growth
Self-assembly
Atomic force microscopy
Photoluminescence
Issue Date14-Feb-2003
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 82, 2401 (2003)
AbstractThe effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As2 atmosphere instead of As4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape.
Publisher version (URL)http://dx.doi.org/10.1063/1.1566799
URIhttp://hdl.handle.net/10261/24993
DOI10.1063/1.1566799
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Granados, D. et al Appl.Phys.Lett_82_2003.pdf136,18 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.