Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/24993
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy |
Autor: | Granados, Daniel CSIC ORCID; García Martínez, Jorge Manuel CSIC ORCID CVN | Palabras clave: | Indium compounds Gallium arsenide III-V semiconductors Semiconductor quantum dots Semiconductor growth Molecular beam epitaxial growth Self-assembly Atomic force microscopy Photoluminescence |
Fecha de publicación: | 14-feb-2003 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 82, 2401 (2003) | Resumen: | The effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As2 atmosphere instead of As4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape. | Versión del editor: | http://dx.doi.org/10.1063/1.1566799 | URI: | http://hdl.handle.net/10261/24993 | DOI: | 10.1063/1.1566799 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
Granados, D. et al Appl.Phys.Lett_82_2003.pdf | 136,18 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
205
checked on 07-may-2024
WEB OF SCIENCETM
Citations
189
checked on 21-feb-2024
Page view(s)
366
checked on 07-may-2024
Download(s)
501
checked on 07-may-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.