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dc.contributor.authorGranados, Daniel-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.date.accessioned2010-06-04T10:32:59Z-
dc.date.available2010-06-04T10:32:59Z-
dc.date.issued2003-02-14-
dc.identifier.citationApplied Physics Letters 82, 2401 (2003)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/24993-
dc.description.abstractThe effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As2 atmosphere instead of As4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape.en_US
dc.description.sponsorshipThe authors would like to thank J. L. Costa Kramer for help during writing and Axel Lorke and Richard Warburton for fruitful discussions. This work was partially supported by Project No. 07T/0062/2000 of the Comunidad Autónoma de Madrid, Project No. TIC99-1035-C02, Nanoself Project No. TIC2002-04096-C03 and by Nanomat of the EC Growth Program, Contract no. G5RD-CT-2001-00545.en_US
dc.format.extent139452 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectIndium compoundsen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectSemiconductor growthen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectSelf-assemblyen_US
dc.subjectAtomic force microscopyen_US
dc.subjectPhotoluminescenceen_US
dc.titleIn(Ga)As self-assembled quantum ring formation by molecular beam epitaxyen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.1566799-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.1566799en_US
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