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Título: | Microstructural improvements of InP on GaAs „001… grown by molecular |
Autor: | Morales, F.M.; García García, Ricardo CSIC ORCID; Molina, Sergio I.; Aouni, A.; Postigo, Pablo Aitor CSIC ORCID; Fonstad, C. G. | Palabras clave: | Dislocations Electron diffraction Hydrogenation III-V semiconductors Indium compounds Molecular beam epitaxial growth Rapid thermal annealing Semiconductor epitaxial layers Semiconductor growth Stacking faults Transmission electron microscopy |
Fecha de publicación: | 30-ene-2009 | Editor: | American Institute of Physics | Citación: | Appl. Phys. Lett. 94, 041919 (2009) | Resumen: | The characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects. | Versión del editor: | http://link.aip.org http://dx.doi.org/10.1063/1.3077610 |
URI: | http://hdl.handle.net/10261/23579 | DOI: | 10.1063/1.3077610 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Morales, F.M. et al Appl. Phys. Lett._94_2009.pdf | 271,97 kB | Adobe PDF | Visualizar/Abrir |
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