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dc.contributor.authorMorales, F.M.-
dc.contributor.authorGarcía García, Ricardo-
dc.contributor.authorMolina, Sergio I.-
dc.contributor.authorAouni, A.-
dc.contributor.authorPostigo, Pablo Aitor-
dc.contributor.authorFonstad, C. G.-
dc.date.accessioned2010-04-27T11:06:45Z-
dc.date.available2010-04-27T11:06:45Z-
dc.date.issued2009-01-30-
dc.identifier.citationAppl. Phys. Lett. 94, 041919 (2009)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/23579-
dc.description.abstractThe characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects.en_US
dc.description.sponsorshipThis work was supported by the Spanish MEC (Grant Nos. TEC2005–05781-C03–02 and MAT2007–60643), and MCI (Grant Nos. TEC2008–06756-C03–02), Junta de Andalucía (PAI group TEP-120; Project No. PAI05-TEP-00383), and Project Nos. NAN2004–09109-C04–01, TEC-2005–05781-C03–01, CONSOLIDER-Ingenio 2010 CSD2006–00019 QOIT and CSD2006–004 GENESIS-FV. TEM measurements were carried out at DME, SCCYT-Universidad de Cádiz.en_US
dc.format.extent278502 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectDislocationsen_US
dc.subjectElectron diffractionen_US
dc.subjectHydrogenationen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectRapid thermal annealingen_US
dc.subjectSemiconductor epitaxial layersen_US
dc.subjectSemiconductor growthen_US
dc.subjectStacking faultsen_US
dc.subjectTransmission electron microscopyen_US
dc.titleMicrostructural improvements of InP on GaAs „001… grown by molecularen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.3077610-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://link.aip.orgen_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.3077610en_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.grantfulltextopen-
item.openairetypeartículo-
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