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Título: | Decay mechanisms of excited electrons in quantum-well states of ultrathin Pb islands grown on Si(111): Scanning tunneling spectroscopy and theory |
Autor: | Hong, I-Po; Brun, Christophe; Patthey, François; Sklyadneva, Irina Yu.; Zubizarreta, X. CSIC; Heid, Rolf; Silkin, Viatcheslav M. CSIC ORCID; Echenique, Pedro M. CSIC ORCID; Bohnen, Klaus-Peter; Chulkov, Eugene V. CSIC ORCID; Schneider, Wolf-Dieter | Fecha de publicación: | 2009 | Editor: | American Physical Society | Citación: | Physical Review B 80(8): 081409(R) (2009) | Resumen: | Using low-temperature scanning tunneling spectroscopy at 5 and 50 K, we studied the linewidth of unoccupied quantum-well states in ultrathin Pb islands, grown on Si(111) on two different Pb/Si interfaces. A quantitative analysis of the differential conductance spectra allowed us to determine the electron-electron (e−e), electron-phonon (e-ph) and the interface and defect contributions to the lifetime. Layer-dependent ab initio calculations of the e-ph linewidth contribution are in excellent agreement with the data. Importantly, the sum of the calculated e−e and e-ph lifetime broadening follows the experimentally observed quadratic energy dependence. | Versión del editor: | https://doi.org/10.1103/PhysRevB.80.081409 | URI: | http://hdl.handle.net/10261/224300 | DOI: | 10.1103/PhysRevB.80.081409 | ISSN: | 2469-9950 |
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