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| Título: | Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study |
Autor: | Moreno, M. CSIC; Kumar, A.; Tallarida, M.; Horn, K.; Ney, A.; Ploog, K. H. | Fecha de publicación: | 26-feb-2008 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 92(8): 084103 (2008) | Resumen: | We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100) films grown on GaAs(001) as it evolves upon arsenic decapping. Line-shape analyses of high-resolution As 3d photoelectron emission spectra recorded at room temperature RT allow us to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic, and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties of MnAs films around RT | Descripción: | 3 pages, 2 figures. | Versión del editor: | http://dx.doi.org/10.1063/1.2888953 | URI: | http://hdl.handle.net/10261/20994 | DOI: | 10.1063/1.2888953 | ISSN: | 0003-6951 |
| Aparece en las colecciones: | (ICMM) Artículos |
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