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Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor

AuthorsCampos García, Antonio ; Riera Galindo, Sergi; Puigdollers, Joaquim; Mas Torrent, Marta
High stability
Semiconductor−dielectric interface
Issue Date9-May-2018
PublisherAmerican Chemical Society
CitationACS Applied Materials and Interfaces 10(18): 15952–15961 (2018)
AbstractSolution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSC) lags behind their p-type counterparts. The trapping of electrons at the semiconductor–dielectric interface leads to a lower performance and operational stability. Herein we report printed small molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor–dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast oxidation of the OSC. Additionally, a CMOS-like inverter is fabricated depositing a p-type and n-type OSCs simultaneously.
Publisher version (URL)http://dx.doi.org/10.1021/acsami.8b02851
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