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Título: | Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor |
Autor: | Campos García, Antonio; Riera Galindo, Sergi; Puigdollers-González, Joaquim; Mas Torrent, Marta CSIC ORCID | Palabras clave: | Density-of-states High stability n-type OFET Semiconductor−dielectric interface |
Fecha de publicación: | 9-may-2018 | Editor: | American Chemical Society | Citación: | ACS Applied Materials and Interfaces 10(18): 15952–15961 (2018) | Resumen: | Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSC) lags behind their p-type counterparts. The trapping of electrons at the semiconductor–dielectric interface leads to a lower performance and operational stability. Herein we report printed small molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor–dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast oxidation of the OSC. Additionally, a CMOS-like inverter is fabricated depositing a p-type and n-type OSCs simultaneously. | Versión del editor: | http://dx.doi.org/10.1021/acsami.8b02851 | URI: | http://hdl.handle.net/10261/165506 | ISSN: | 1944-8244 |
Aparece en las colecciones: | (ICMAB) Artículos |
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Campos_ACSApplMatInt_2018_postprint.pdf | 1,03 MB | Adobe PDF | Visualizar/Abrir |
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