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Navegación por Autor Ohyama, H.
Mostrando resultados 1 a 4 de 4
Derechos | Preview | Fecha Public. | Título | Autor(es) | Tipo |
openAccess | | 2013 | 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O <inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectrics | Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Takakura, K.; Tsunoda, I.; Zabala, Miguel; Beldarrain, O.; González, M. B.; García, H.; Castán, H.; Gómez, A.; Dueñas, S. | artículo |
openAccess | | 1-jun-2009 | Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation | Rafí, J. M. CSIC ORCID ; Boulord, C.; Hayama, K.; Ohyama, H.; Campabadal, Francesca CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Lozano, M.; Simoen, E.; Claeys, C. | artículo |
openAccess | | 1-sep-2007 | Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs | Rafí, J. M. CSIC ORCID ; Simoen, E.; Mercha, A.; Hayama, K.; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Claeys, C. | artículo |
openAccess | | 1-sep-2006 | Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs | Rafí, J. M. CSIC ORCID ; Simoen, E.; Hayama, K.; Mercha, A.; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Claeys, C. | artículo |