Mostrando resultados 17 a 36 de 40
< Anterior
Siguiente >
| Derechos | Preview | Fecha Public. | Título | Autor(es) | Tipo |
| openAccess |  | 1-ene-2018 | Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: Electrical characterization and electron irradiation effects | Rafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Godignon, P.; Quirion, David; Hidalgo, Salvador ; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, Pablo | artículo |
| openAccess |  | 2016 | Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> dielectric | Rafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Fadeyev, V.; Galloway, Z.; Sadrozinski, H.F.-W.; Christophersen, M.; Phlips, B.F.; Lynn, D.; Kierstead, J.; Hoeferkamp, M.; Gorelov, I.; Palni, P.; Wang, R.; Seidel, S. | artículo |
| openAccess |  | 2007 | Gate induced floating body effects in TiN/SiON and TiN/HfO<inf>2</inf> gate stack triple gate SOI nFinFETs | Rafí, J. M. CSIC ORCID ; Simoen, E.; Mercha, A.; Collaert, Nadine; Hayama, K.; Campabadal, Francesca CSIC ORCID ; Claeys, C. | artículo |
| openAccess |  | 1-abr-2000 | Hot carrier reliability in deep-submicrometer LATID NMOSFETs | Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 1-ago-2001 | Hot-carrier degradation in deep-submicrometer nMOSFETs: Lightly doped drain vs. large angle tilt implanted drain | Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 1-abr-2000 | Hot-carrier reliability in deep-submicrometer LATID NMOSFETs | Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 1-sep-2006 | Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs | Rafí, J. M. CSIC ORCID ; Simoen, E.; Hayama, K.; Mercha, A.; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Claeys, C. | artículo |
| openAccess |  | 1-ene-1999 | Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETs | Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID | artículo |
| closedAccess |  | 2020 | IBIC analysis of SiC detectors developed for fusion applications | Jiménez-Ramos, M. C. CSIC ORCID; García López, J. CSIC ORCID; García-Osuna, Adrián; Rodríguez-Ramos, M. CSIC ORCID; Villalpando Barroso, A.; García-Muñoz, M.; Andrade, Eduardo; Pellegrini, Giulio CSIC ORCID; Otero Ugobono, Sofia; Godinho, V. CSIC ORCID; Rafí, J. M. CSIC ORCID ; Rius, Gemma CSIC ORCID | artículo |
| openAccess |  | 7-feb-2005 | Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon | Rafí, J. M. CSIC ORCID ; Simoen, E.; Claeys, C.; Huang, Y. L.; Ulyashin, A. G.; Job, R.; Versluys, J.; Clauws, P.; Lozano, M.; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 2013 | Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O<inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectrics | Rafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 2004 | Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs | Rafí, J. M. CSIC ORCID ; Mercha, A.; Simoen, E.; Claeys, C. | artículo |
| openAccess |  | 1-ene-2005 | Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs | Rafí, J. M. CSIC ORCID ; Simoen, E.; Mercha, A.; Campabadal, Francesca CSIC ORCID ; Claeys, C. | artículo |
| openAccess |  | 1-dic-2004 | Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors | Rafí, J. M. CSIC ORCID ; Mercha, Abdelkarim; Simoen, Eddy; Hayama, Kiyoteru; Claeys, C. | artículo |
| openAccess |  | 2009 | Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation | Rafí, J. M. CSIC ORCID ; Vanhellemont, J.; Simoen, E.; Chen, J.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 1-oct-2023 | Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors | Rafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Godignon, Philippe; Rius, Gemma CSIC ORCID ; Dauderys, Vainius; Tsunoda, Isao; Yoneoka, Masashi; Takakura, Kenichiro; Kramberger, Gregor; Moll, Michael | artículo |
| openAccess | | 31-may-2022 | Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applications | Otero Ugobono, Sofia; Rafí, J. M. CSIC ORCID ; Godignon, Philippe; Pellegrini, Giulio CSIC ORCID; Rius, Gemma CSIC ORCID ; Jiménez-Ramos, M. C. CSIC ORCID; García López, J. CSIC ORCID; García-Osuna, Adrián | artículo |
| closedAccess |  | 2009 | Patterning of ALD HfO2 layers on silicon | Andreu, Robert; Sanchez, Javier; Sanchez, Ana; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID | artículo |
| openAccess |  | 17-feb-2009 | Progressive degradation of TiNSiON and TiNHf O2 gate stack triple gate SOI nFinFETs subjected to electrical stress | Rafí, J. M. CSIC ORCID ; Simoen, E.; Mercha, A.; Collaert, Nadine; Campabadal, Francesca CSIC ORCID ; Claeys, C. | artículo |
| closedAccess | | ene-2024 | Spectrometric performance of SiC radiation detectors at high temperature | Jiménez-Ramos, M. C. CSIC ORCID; García-Osuna, Adrián; Rodríguez-Ramos, M. CSIC ORCID; Viezzer, Eleonora CSIC ORCID; Pellegrini, Giulio CSIC ORCID; Godignon, Philippe; Rafí, J. M. CSIC ORCID ; Rius, Gemma CSIC ORCID; García López, J. CSIC ORCID | artículo |
