Carrier storage in Ge nanoparticles produced by pulsed laser deposition

Abstract

In this work, we report on the electrical characterization of Ge nanoparticles (NPs) produced by pulsed laser deposition (PLD) at room temperature (RT) in Ar gas inert atmosphere using a shadowed off-axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between thin alumina films can be obtained on p-type Si(100) substrates following a low temperature and short rapid thermal annealing (RTA) treatment. Metal-oxide-semiconductor (MOS) structures with and without Ge NPs embedded in the alumina were prepared for the electrical measurements. The results indicate a strong memory effect at relatively low programming voltages (±4 V) due to the presence of Ge NPs. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) Non-volatile memory devices based on semiconductor nanoparticles is a promising strategy to enhance the device performance. In this Letter, carrier storage in Ge nanoparticles embedded between alumina thin films is demonstrated. The presented fabrication approach allows for producing the structure in a simple process and with no need for high temperature and/or long-time thermal annealing treatments. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.