Pulsed laser deposition of Eu:Y₂O₃ thin films on (0001) a-Al ₂O₃

Abstract

This paper focuses on the preparation and characterization of crystalline thin films of rare-earth-doped sesquioxides (Y₂O₃, Lu₂O₃) grown by pulsed laser deposition on single-crystal (0001) sapphire substrates. X-ray diffraction measurements show that the films with thicknesses between 1 nm and 500 nm were highly textured along the 111 direction. Using Rutherford backscattering analysis, the correct stoichiometric composition of the films was established. The emission and excitation spectra of europium-doped films with a thickness ≥ 100 nm look similar to those of the corresponding crystalline bulk material, whereas films with a thickness ≤ 20 nm show a completely different emission behavior.