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Título: | Synthesis of smooth amorphous thin films of silicon carbide with controlled properties through pulsed laser deposition |
Autor: | Oujja, Mohamed CSIC ORCID ; Tabakkouht, K.; Sanz, Mikel CSIC ORCID ; Rebollar, Esther CSIC ORCID ; Sánchez-Arenillas, M. CSIC ORCID; Marco, J.F. CSIC ORCID CVN ; Castillejo, Marta CSIC ORCID ; de Nalda, R. CSIC ORCID | Palabras clave: | Pulsed laser deposition Thin flms Silicon carbide Multianalytical approach |
Fecha de publicación: | 5-abr-2022 | Editor: | Springer Nature | Citación: | Applied Physics A: Materials Science and Processing 128: 128:375 (2022) | Resumen: | Thin films of silicon carbide (SiC) on Si (100) and SrTiO (100) substrates have been grown by nanosecond pulsed laser deposition (PLD) with a Q-switched Nd:YAG laser operating at the wavelengths of 1064, 532 and 266 nm. The deposits obtained consisted of smooth and uniform layers of amorphous SiC, free of holes and cracks, with thicknesses in the range of 30–100 nm and average roughness substantially lower than 1 nm. The role of laser wavelength and of substrate temperature (300 K vs. 1025 K) on morphology, crystallinity and composition of the deposits was assessed. The films were analyzed by X-ray diffraction, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. In addition, optical emission spectroscopy was employed to evaluate the characteristics of the ablation plasma and its correlation with the film growth. | Descripción: | 10 pags., 5 figs., 1 tab. | Versión del editor: | http://dx.doi.org/10.1007/s00339-022-05499-9 | URI: | http://hdl.handle.net/10261/277442 | DOI: | 10.1007/s00339-022-05499-9 | Identificadores: | doi: 10.1007/s00339-022-05499-9 issn: 1432-0630 |
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