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dc.contributor.authorJiménez Guerrero, Ignacio-
dc.contributor.authorGarcía-Hernández, Mar-
dc.contributor.authorAlbella, J. M.-
dc.contributor.authorTerminello, Louis J.-
dc.date.accessioned2010-02-15T11:30:39Z-
dc.date.available2010-02-15T11:30:39Z-
dc.date.issued1998-11-16-
dc.identifier.citationApplied Physics Letters 73(20): 2911 (1998)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/21070-
dc.description3 pages, 2 figures.en_US
dc.description.abstractThe bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed.en_US
dc.description.sponsorshipThis work has been partially financed by the Spanish CICYT under Projects Nos. MAT96-0529 and PB94-53, the NATO Project CRG-971539, and the U.S. Department of Energy through Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48. The work was performed at the Stanford Synchrotron Radiation Laboratory, which is supported by the DOE, Office of Basic Energy Science.en_US
dc.format.extent60305 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.titleOrientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge studyen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.122627-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.122627en_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.openairetypeartículo-
item.fulltextWith Fulltext-
item.languageiso639-1en-
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