Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/205490
COMPARTIR / EXPORTAR:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE

Invitar a revisión por pares abierta
Título

Orpiment under compression: metavalent bonding at high pressure

AutorCuenca-Gotor, V. P.; Sans, Juan Ángel; Gomis, Óscar; Mujica, A.; Radescu, S.; Muñoz, A. CSIC; Rodríguez-Hernández, P.; Lora da Silva, E.; Popescu, Catalin; Ibáñez Insa, Jordi CSIC ORCID ; Vilaplana, Rosario; Manjón, F. J.
Palabras claveArsenic sulfide crystals
mineral orpiment
X-ray diffraction
High-pressure
group-15 sesquichalcogenides
metavalent or resonant bonding
Ab initio calculations
Electronic band structure
Raman scattering
X-ray diffraction
Fecha de publicación2020
EditorRoyal Society of Chemistry (UK)
CitaciónPhysical Chemistry Chemical Physics, 22(6): 3352-3369 (2020)
ResumenWe report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of layered monoclinic arsenic sulfide crystals (α-As2S3), aka mineral orpiment, under compression. X-ray diffraction and Raman scattering measurements performed on orpiment samples at high pressure and combined with ab initio calculations have allowed us to determine the equation of state and the tentative assignment of the symmetry of many Raman-active modes of orpiment. From our results, we conclude that no first-order phase transition occurs up to 25 GPa at room temperature; however, compression leads to an isostructural phase transition above 20 GPa. In fact, the As coordination increases from threefold at room pressure to more than fivefold above 20 GPa. This increase in coordination can be understood as the transformation from a solid with covalent bonding to a solid with metavalent bonding at high pressure, which results in a progressive decrease of the electronic and optical bandgap, an increase of the dielectric tensor components and Born effective charges, and a considerable softening of many high-frequency optical modes with increasing pressure. Moreover, we propose that the formation of metavalent bonding at high pressures may also explain the behavior of other group-15 sesquichalcogenides under compression. In fact, our results suggest that group-15 sesquichalcogenides either show metavalent bonding at room pressure or undergo a transition from p-type covalent bonding at room pressure towards metavalent bonding at high pressure, as a precursor towards metallic bonding at very high pressure.
Versión del editorhttps://doi.org/10.1039/C9CP06298J
URIhttp://hdl.handle.net/10261/205490
DOI10.1039/C9CP06298J
ISSN1463-9076
E-ISSN1463-9084
Aparece en las colecciones: (Geo3Bcn) Artículos




Ficheros en este ítem:
Fichero Descripción Tamaño Formato
Ibañez_Physical Chemistry Chemical Physics.pdf3,44 MBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo

CORE Recommender

WEB OF SCIENCETM
Citations

19
checked on 26-feb-2024

Page view(s)

202
checked on 30-abr-2024

Download(s)

166
checked on 30-abr-2024

Google ScholarTM

Check

Altmetric

Altmetric


Este item está licenciado bajo una Licencia Creative Commons Creative Commons