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Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/6141
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dc.contributor.authorVan der Sande, Guyen_US
dc.contributor.authorPeeters, Michaelen_US
dc.contributor.authorVeretennicoff, Irinaen_US
dc.contributor.authorDanckaert, Janen_US
dc.contributor.authorVerschaffelt, Guyen_US
dc.contributor.authorBalle, Salvadoren_US
dc.date.accessioned2008-07-22T15:15:52Z-
dc.date.available2008-07-22T15:15:52Z-
dc.date.issued2006-09-12en_US
dc.identifier.citationIEEE Journal of Quantum Electronics 42, 896-904 (2006)en_US
dc.identifier.issn0018-9197-
dc.identifier.urihttp://hdl.handle.net/10261/6141-
dc.description9 pages.-- Final full-text version of the paper available at: http://dx.doi.org/10.1109/JQE.2006.879816.-
dc.description.abstractWe discuss the effect of uniaxial planar stress on polarization switching in vertical-cavity surface-emitting lasers (VCSELs). The approach is based on an explicit form of a frequency-dependent complex susceptibility of the uniaxially stressed quantum-well semiconductor material. In this mesoscopic framework, we have taken cavity anisotropies, spin carrier dynamics, and thermal shift of the gain curve into account. In this way, we present a model that provides a global overview of the polarization switching phenomenon. The results are compared with experiments on an air-post VCSEL operating at 980 nm.en_US
dc.description.sponsorshipThis work was supported in part by the European RTN network VISTA under Contract HPRN-CT-2000-00034 and the COST 288 action, and in part by the Interuniversity Attraction Pole program (IAP V/18), in part by the Concerted Research Action "Photonics in Computing", and in part by the Research Council of the Vrije Universiteit Brussel. The work of G. Van der Sande, G. Verschaffelt, and J. Danckaert was supported in part by the Fund for Scientific Research—Flanders (FWO). The work of S. Balle was supported in part by the Ministerio de Ciencia y Tecnología, Spain, through Project TIC2002-04255-C04-03.-
dc.format.extent2373 bytes-
dc.format.extent1310496 bytes-
dc.format.mimetypetext/plain-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.rightsopenAccess-
dc.source.urihttp://dx.doi.org/10.1109/JQE.2006.879816-
dc.subjectNumerical analysis-
dc.subjectOptical polarization-
dc.subjectQuantum theory-
dc.subjectStress-
dc.subjectSurface emitting lasers-
dc.titleThe effects of Stress, Temperature and Spin Flips on Polarization Switching in VCSELSen_US
dc.typeartículoen_US
dc.identifier.doi10.1109/JQE.2006.879816-
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.grantfulltextopen-
item.openairetypeartículo-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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