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Título: | Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing |
Autor: | Frechilla, Alejandro CSIC ORCID; Napari, Mari; Strkalj, Nives; Barriuso, Eduardo CSIC ORCID; Niang, Kham; Hellenbrand, Markus; Štrichovanec, Pavel; Simanjuntak, Firman Mangasa; Antorrena, Guillermo CSIC; Flewitt, Andrew; Magén, César CSIC ORCID; Fuente, Germán F. de la CSIC ORCID ; MacManus-Driscoll, Judith L.; Angurel, Luis A. CSIC ORCID; Pardo, José A. CSIC ORCID | Palabras clave: | Ferroelectricity Laser processing Hafnia Crystallization |
Fecha de publicación: | 2024 | Editor: | Elsevier | Citación: | Applied Materials Today 36: 102033 (2024) | Resumen: | In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic layer deposited amorphous Hf0.5Zr0.5O2 (HZO) films in an air atmosphere. We used an infrared laser with 1064 nm wavelength and 800 ps pulses to anneal TiN/HZO/TiN capacitors by scanning an 80 μm-diameter spot along their top surface in a controlled way. The laser annealing process was optimised in terms of fluence to achieve the complete crystallization of HZO into a non-monoclinic polymorph, as demonstrated by X-ray diffraction and transmission electron microscopy. Piezoresponse force microscopy and polarization-field loops confirm that the optimal as-annealed HZO films are piezoelectric and ferroelectric from the first cycle on. Spatial selectivity was accomplished by scanning the laser on selected areas of the samples. Micro-diffraction experiments show that the transition between the crystallized and the amorphous region is abrupt within a distance of several hundred µm. | Versión del editor: | https://doi.org/10.1016/j.apmt.2023.102033 | URI: | http://hdl.handle.net/10261/354770 | DOI: | 10.1016/j.apmt.2023.102033 | E-ISSN: | 2352-9407 |
Aparece en las colecciones: | (INMA) Artículos |
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spatiallyannealing.pdf | 5,99 MB | Adobe PDF | Visualizar/Abrir |
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