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Título: | Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates |
Autor: | Ruiz, A.; González Sotos, Luisa CSIC ORCID ; Mazuelas Esteban, Ángel José CSIC; Briones Fernández-Pola, Fernando CSIC | Fecha de publicación: | nov-1989 | Editor: | Springer Nature | Citación: | Applied Physics A 49(5): 543-545 (1989) | Resumen: | InAs layers with thickness ranging from 0.1 to 2.5 μm have been grown directly on highly mismatched (7.4%) (001) GaAs substrates by atomic layer molecular beam epitaxy (ALMBE). This growth method, based on the modulated deposition of one or both component species, provides InAs layers with excellent flat morphology, independently of the total thickness. A detailed study of the evolution of the electron diffraction (RHEED) pattern indicates that a complete decoupling between the InAs epitaxial layer and the GaAs substrate is reached in less that 10 monolayers. Evidence is obtained that layer-by-layer nucleation takes place from the beginning of the growth. | Descripción: | 3 páginas, 3 figuras, 1 tabla.-- PACS: 68.55.+b | Versión del editor: | http://dx.doi.org/10.1007/BF00617022 | URI: | http://hdl.handle.net/10261/33875 | DOI: | 10.1007/BF00617022 | ISSN: | 0947-8396 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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