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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/31969
Title: Electro-Optical Characterization of Self-Assembled InAs/GaAs Quantum Rings Embedded in P-i-N and Schottky Diodes
Authors: Taboada, A. G.; Suárez Arias, Ferrán; Granados, Daniel; Badcock, T. J.; Mowbray, D. J.; Groom, K. M.; Alén, Benito; García Martínez, Jorge Manuel; Dotor, María Luisa
Issue Date: 10-Apr-2007
Publisher: American Institute of Physics
Citation: Aip Conference Proceedings 893: 909-910 (2007)
Abstract: In this work we present measurements of excitation of the photoluminescence (PLE), photocurrent (PC) and electroluminescence (EL) in ring shaped nanostructures grown by MBE embedded in two different electro-optical devices: a Schottky diode and a P-i-N diode. This characterization will be used to improve QRs laser devices. ©2007 American Institute of Physics
Description: 2 páginas.-- Physics of Semicondcutors: 28th International Conference on the Physics of Semiconductors - ICPS 2006.
Publisher version (URL): http://dx.doi.org/10.1063/1.2730187
URI: http://hdl.handle.net/10261/31969
ISSN: 0094-243X
DOI: 10.1063/1.2730187
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