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| Título: | Circuit reliability prediction: Challenges and solutions for the device time-dependent variability characterization roadblock |
Autor: | Nafria, M.; Diaz-Fortuny, J.; Saraza-Canflanca, P. CSIC ORCID; Martín-Martínez, Javier; Roca, Elisenda CSIC ORCID ; Castro-López, R. CSIC ORCID ; Rodríguez, R.; Martín-Lloret, P. CSIC; Toro-Frias, A. CSIC; Mateo, D.; Barajas, E.; Aragones, X.; Fernández, Francisco V. CSIC ORCID | Palabras clave: | aging BTI characterization CMOS technology HCI degradation MOSFET RTN Time-dependent variability |
Fecha de publicación: | 19-abr-2021 | Editor: | Institute of Electrical and Electronics Engineers | Citación: | 2021 IEEE Latin America Electron Devices Conference (LAEDC), 2021, pp. 1-4. | Resumen: | The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-Aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples. | Descripción: | Copyright IEEE | Versión del editor: | https://doi.org/10.1109/LAEDC51812.2021.9437920 | URI: | http://hdl.handle.net/10261/307451 | DOI: | 10.1109/LAEDC51812.2021.9437920 | ISBN: | 9781665415101 |
| Aparece en las colecciones: | (IMSE-CNM) Comunicaciones congresos |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| nafria_invited_laedc21_final.pdf | articulo principal | 540,61 kB | Adobe PDF |  Visualizar/Abrir |
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