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Título: | Epitaxial growth of β-SiC on ion-beam synthesized β-SiC: Structural characterization |
Autor: | Romano-Rodríguez, Alberto; Pérez Rodríguez, Alejandro; Serre, Christophe; Morante, Joan Ramón CSIC ORCID; Esteve i Tintó, Jaume; Acero Leal, María Cruz CSIC ORCID | Fecha de publicación: | may-2000 | Editor: | Trans Tech Publications | Citación: | Materials Science Forum 338-342: 309-312 (2000) | Resumen: | In this work we present for the first time, to our knowledge, the CVD epitaxial growth of β-SiC using an ion beam synthesized (IBS) β-SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 °C. The ion beam synthesized continuous layer is constituted by β-SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed. | Descripción: | Trabajo presentado en el ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, celebrado en Raleigh-Cary, Carolina del Norte (Estados Unidos), del 10 al 15 de octubre de 1999 | Versión del editor: | http://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.309 | URI: | http://hdl.handle.net/10261/257898 | DOI: | 10.4028/www.scientific.net/MSF.338-342.309 | Identificadores: | doi: 10.4028/www.scientific.net/MSF.338-342.309 issn: 0255-5476 e-issn: 1662-9752 |
Aparece en las colecciones: | (IMB-CNM) Artículos |
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