Preparation of graphene and boron nitride layers by evaporation and MBE-like techniques

Abstract

We report the preparation of graphene and boron nitride layers prepared by carbon evaporation in a vacuum and ion assisted deposition of boron with nitrogen ions, respectively. The films were characterized by Raman, UV-vis-NIR, Infrared and x-ray absorption spectroscopies. The two first techniques are particularly valuable for graphene characterization, while the two last ones are especially informative for the quality of the boron nitrides. Regarding graphene layers, their quality is discussed in terms of the substrate material and the growth temperature. As substrate materials we have tested quartz, sapphire, fused silica, Ni and Cu. Temperatures between 800ºC and 1100ºC are considered. With regards to boron nitrides, their quality is discussed in terms of B/N ratio, N ion energy and substrate temperature. A general picture of parameter control towards MBE growth of these materials is presented.