Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/176405
COMPARTIR / EXPORTAR:
SHARE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Method of producing a junction field-effect transistor (JFET) |
Autor: | Tournier, Dominique; Chevalier, Florian; Godignon, Philippe; Millán, José | Fecha de publicación: | 3-dic-2015 | Citación: | US2015349084 A1 | Resumen: | The invention concerns a method for producing a field effect transistor having a trench gate comprising: • - the forming (110) of at least one trench (11, 12, 13) in a semi-conductive substrate (1) having a first type of conductivity, said substrate comprising two opposing faces called front face and rear face, • - the primary implantation (120) of ions having a second type of conductivity so as to implant each trench of the substrate to form an active gate area, • - the depositing (160) of a layer of polycrystalline silicon having the second type of conductivity on the implanted active gate area, • - the oxidation (160) of the layer of polycrystalline silicon, and • - the metallisation (180) of the substrate on the front and rear faces of same in order to form active source and drain areas | URI: | http://hdl.handle.net/10261/176405 |
Aparece en las colecciones: | (IMB-CNM) Patentes |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
US2015349084A1.pdf | 571,58 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
Page view(s)
171
checked on 06-may-2024
Download(s)
56
checked on 06-may-2024
Google ScholarTM
Check
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.