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Título: | Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells |
Autor: | Silvestre, Santiago; Boronat, Albert CSIC ORCID; Colina, Mónica; Castañer, Luis; Olea, Javier; Pastor, David CSIC ORCID CVN; Prado, Álvaro del; Mártil, Ignacio; González-Díaz, Germán; Luque López, Antonio; Antolín, Elisa CSIC ORCID; Hernández, E.; Ramiro, Íñigo; Artacho, Irene; López, Esther; Martí Vega, Antonio | Fecha de publicación: | 22-nov-2013 | Editor: | Institute of Pure and Applied Physics | Citación: | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 52: 122302 (2013) | Resumen: | In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage. © 2013 The Japan Society of Applied Physics. | Versión del editor: | http://dx.doi.org/10.7567/JJAP.52.122302 | URI: | http://hdl.handle.net/10261/132827 | DOI: | 10.7567/JJAP.52.122302 | Identificadores: | issn: 0021-4922 e-issn: 1347-4065 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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