English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/132827
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

AuthorsSilvestre, Santiago; Boronat, Albert ; Colina, Mónica; Castañer, Luis; Olea, Javier; Pastor, David ; Prado, Álvaro del; Mártil, Ignacio; González-Díaz, Germán; Luque López, Antonio; Antolín, Elisa; Hernández, E.; Ramiro, Íñigo; Artacho, Irene; López, Esther; Martí Vega, Antonio
Issue Date22-Nov-2013
PublisherInstitute of Pure and Applied Physics
CitationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 52: 122302 (2013)
AbstractIn this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage. © 2013 The Japan Society of Applied Physics.
Publisher version (URL)http://dx.doi.org/10.7567/JJAP.52.122302
URIhttp://hdl.handle.net/10261/132827
DOI10.7567/JJAP.52.122302
Identifiersissn: 0021-4922
e-issn: 1347-4065
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
View/Open
Show full item record
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.