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Título: | Impact of graphene polycrystallinity on the performance of graphene field-effect transistors |
Autor: | Jiménez, David CSIC ORCID; Cummings, Aron W. CSIC ORCID; Chaves, Ferney; Tuan, Dinh van CSIC; Kotakoski, Jani; Roche, Stephan CSIC ORCID | Fecha de publicación: | 2014 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 104(4): 043509 (2014) | Resumen: | We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices. | Descripción: | Under the terms of the Creative Commons Attribution (CC BY) license to their work. | Versión del editor: | http://dx.doi.org/10.1063/1.4863842 | URI: | http://hdl.handle.net/10261/126937 | DOI: | 10.1063/1.4863842 | Identificadores: | doi: 10.1063/1.4863842 issn: 0003-6951 e-issn: 1077-3118 |
Aparece en las colecciones: | (CIN2) Artículos |
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field-effect transistors.pdf | 1,91 MB | Adobe PDF | Visualizar/Abrir |
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