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Título: | Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy |
Autor: | Hernández-Maldonado, D.; Herrera, Miriam; Alonso-González, Pablo CSIC ORCID ; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID ; Gazquez, Jaume; Varela, María; Pennycook, Stephen J.; Guerrero-Lebrero, María de la Paz; Pizarro, J.; Galindo, P. L.; Molina, Sergio I. | Palabras clave: | Atomic-column resolution Chemical mapping Quantification Muraki's segregation model HAADF-STEM |
Fecha de publicación: | jul-2011 | Editor: | Cambridge University Press | Citación: | Microscopy and Microanalysis 17(4): 578-581 (2011) | Resumen: | We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1?xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. © Microscopy Society of America 2011. | Versión del editor: | http://dx.doi.org/10.1017/S1431927611000213 | URI: | http://hdl.handle.net/10261/103444 | DOI: | 10.1017/S1431927611000213 | Identificadores: | issn: 1431-9276 e-issn: 1435-8115 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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