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Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/99674
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dc.contributor.authorShchepetov, A.-
dc.contributor.authorAlzina, Francesc-
dc.contributor.authorSchneider, L.-
dc.contributor.authorCuffe, John-
dc.contributor.authorSotomayor Torres, C. M.-
dc.contributor.authorAhopelto, Jouni-
dc.date.accessioned2014-07-10T09:30:31Z-
dc.date.available2014-07-10T09:30:31Z-
dc.date.issued2013-
dc.identifierdoi: 10.1063/1.4807130-
dc.identifierissn: 0003-6951-
dc.identifiere-issn: 1077-3118-
dc.identifier.citationApplied Physics Letters 102: 192108 (2013)-
dc.identifier.urihttp://hdl.handle.net/10261/99674-
dc.descriptionet al.-
dc.description.abstractWe report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena. © 2013 AIP Publishing LLC.-
dc.description.sponsorshipThe authors acknowledge the financial support from the FP7 projects NANOFUNCTION (Grant No. 257375) and NANOPOWER (Grant No. ICT-2010-256959). L.S., J.C., F.A., and C.M.S.T. acknowledge the support of the Spanish projects nanoTHERM (Grant No. CSD2010-0044) and ACPHIN (FIS2009-10150). M.P. and A.S. acknowledge funding from the Academy of Finland (Grant No. 252598).-
dc.publisherAmerican Institute of Physics-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/257375-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/256959-
dc.relation.isversionofPublisher's version-
dc.rightsopenAccess-
dc.titleUltra-thin free-standing single crystalline silicon membranes with strain control-
dc.typeartículo-
dc.identifier.doi10.1063/1.4807130-
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.4807130-
dc.date.updated2014-07-10T09:30:31Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.contributor.funderEuropean Commission-
dc.contributor.funderMinisterio de Ciencia e Innovación (España)-
dc.contributor.funderAcademy of Finland-
dc.relation.csicNo-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004837es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002341es_ES
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeartículo-
item.cerifentitytypePublications-
item.grantfulltextopen-
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