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Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip

AutorRamírez, J. M.; Navarro-Urrios, D.
Fecha de publicación2013
EditorInstitute of Physics Publishing
CitaciónNanotechnology 24(11): 115202 (2013)
ResumenAn integrated erbium-based light emitting diode has been realized in a waveguide configuration allowing 1.54 μm light signal routing in silicon photonic circuits. This injection device is based on an asymmetric horizontal slot waveguide where the active slot material is Er3+ in SiO 2 or Er3+ in Si-rich oxide. The active horizontal slot waveguide allows optical confinement, guiding and lateral extraction of the light for on-chip distribution. Light is then coupled through a taper section to a passive Si waveguide terminated by a grating which extracts (or inserts) the light signal for measuring purposes. We measured an optical power density in the range of tens of μW/cm2 which follows a super-linear dependence on injected current density. When the device is biased at high current density, upon a voltage pulse (pump signal), free-carrier and space charge absorption losses become large, attenuating a probe signal by more than 60 dB/cm and thus behaving conceptually as an electro-optical modulator. The integrated device reported here is the first example, still to be optimized, of a fundamental block to realize an integrated silicon photonic circuit with monolithic integration of the light emitter. © 2013 IOP Publishing Ltd.
URIhttp://hdl.handle.net/10261/99318
DOI10.1088/0957-4484/24/11/115202
Identificadoresdoi: 10.1088/0957-4484/24/11/115202
issn: 0957-4484
e-issn: 1361-6528
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