English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/99289
COMPARTIR / IMPACTO:
Estadísticas
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Título

Electrical detection of spin precession in freely suspended graphene spin valves on cross-linked poly(methyl methacrylate)

AutorNeumann, Ingmar ; Vondel, Joris van de ; Bridoux, Germàn; Costache, Marius V. ; Alzina, Francesc ; Sotomayor Torres, C. M. ; Valenzuela, Sergio O.
Palabras claveCarrier mobility
Spin precession
Spintronics
Suspended graphen
Nonlocal spin devices
Fecha de publicación2013
EditorWiley-VCH
CitaciónSmall 9(1): 156-160 (2013)
ResumenSpin injection and detection is achieved in freely suspended graphene using cobalt electrodes and a nonlocal spin-valve geometry. The devices are fabricated with a single electron-beam-resist poly(methyl methacrylate) process that minimizes both the fabrication steps and the number of (aggressive) chemicals used, greatly reducing contamination and increasing the yield of high-quality, mechanically stable devices. As-grown devices can present mobilities exceeding 104 cm2 V-1 s-1 at room temperature and, because the contacts deposited on graphene are only exposed to acetone and isopropanol, the method is compatible with almost any contacting material. Spin accumulation and spin precession are studied in these nonlocal spin valves. Fitting of Hanle spin precession data in bilayer and multilayer graphene yields a spin relaxation time of ~125-250 ps and a spin diffusion length of 1.7-1.9 ¿m at room temperature. Electrical detection of spin precession in freely suspended graphene spin valves. The devices are fabricated with a single electron-beam-resist poly(methyl methacrylate) process that minimizes both the fabrication steps and the number of (aggressive) chemicals used, reducing contamination and increasing the yield of the high-quality devices. The method is compatible with almost any contacting material. As-grown devices can present mobilities exceeding 104 cm2 V-1 s-1 at room temperature. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URIhttp://hdl.handle.net/10261/99289
DOI10.1002/smll.201201194
Identificadoresdoi: 10.1002/smll.201201194
issn: 1613-6810
e-issn: 1613-6829
Aparece en las colecciones: (CIN2) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
accesoRestringido.pdf15,38 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.