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Título

Competing misfit relaxation mechanisms in epitaxial correlated oxides

AutorSandiumenge, Felip CSIC ORCID; Santiso, José CSIC ORCID; Balcells, Lluis CSIC ORCID; Konstantinović, Z.; Roqueta, Jaume CSIC; Pomar, Alberto CSIC ORCID; Espinós, J.P. CSIC ORCID; Martínez Perea, Benjamín CSIC ORCID
Fecha de publicación2013
EditorAmerican Physical Society
CitaciónPhysical Review Letters 110: 107206 (2013)
ResumenStrain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic, and octahedral tilting energies in La 0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn-O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e., the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering. © 2013 American Physical Society.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevLett.110.107206
URIhttp://hdl.handle.net/10261/99218
DOI10.1103/PhysRevLett.110.107206
Identificadoresdoi: 10.1103/PhysRevLett.110.107206
issn: 0031-9007
e-issn: 1079-7114
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