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Título: | Cellulose nanocrystals thin films as gate dielectric for flexible organic field-effect transistors |
Autor: | Valentini, L.; Bittolo Bon, S.; Cardinale, M.; Fortunati, Elena; Kenny, José María CSIC ORCID | Palabras clave: | Dielectric gatelayer Organic thin film transistors Cellulose nanocrystals Electrical properties |
Fecha de publicación: | 2014 | Editor: | Elsevier | Citación: | Materials Letters 126: 55- 58 (2014) | Resumen: | We report on the fabrication of flexible field-effect transistor using poly[N-9>-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2- thienyl-2′,1′,3′-benzothiadiazole)] as active channel and cellulose nanocrystals (CNC) as gate dielectric on indium tin-oxide coated polyethyleneterephthalate substrate. The use of CNC as gate dielectric material was found favorable for carrier transport at the semiconductor/dielectric interface with the device showing an on-off ratio of ≈104. These results indicate that CNC is a promising gate dielectric layer for flexible organic field effect transistors. © 2014 Elsevier B.V. | URI: | http://hdl.handle.net/10261/97416 | DOI: | 10.1016/j.matlet.2014.04.003 | Identificadores: | doi: 10.1016/j.matlet.2014.04.003 issn: 0167-577X e-issn: 1873-4979 |
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